| 摘要 |
PURPOSE:To improve the electrostatic discharge resistance of a semiconductor device at large by protecting a control element weak to electrostatic discharge. CONSTITUTION:This device is constituted so that the static electricity applied to an input terminal G may not directly hit a control element 3, being equipped with a MOS-type power element 1, whose gate is connected to the input terminal G, a protective element 2, which is connected to the input terminal G and protects the gate of the MOS-type power element 2 from electrostatic discharge, a control element 3, which controls the gate potential of the MOS power element 1, and a delay element 9, which is connected between the gate electrode of the MOS-type power element 1 and the control element 3. |
