| 摘要 |
PURPOSE:To eliminate any overhang in the electrode window by a patterning with a polycrystaline Si layer left so as to cover the window in the substrate contact region completely in substance. CONSTITUTION:Each electrode window is etched on n<+>-type source, drain and substrate contact impurity regions 15-17 after they are formed on a p-type Si substrate 11. Then, polycrystaline Si layer 19 is grown. A patterning of the layer 19 is made to leave it on the electrode window in the regions 15 and 16 while a polycrystaline Si 19A is left in such a small area on the electrode window 17A on the region 17 as to cover the exposed section of the substrate completely in substance. Then, a wiring layer 20 mainly composed of Al is applied on the regions and wiring is provided thereon following the patterning. Then, the junction between the layer 17 and the substrate 11 is broken to form an ohmic contact with the substrate. In this manner, any overhang can be eliminated in the electrode window thereby preventing any disconnection of the substrate contact section. |
