| 摘要 |
PURPOSE:To make it possible to detect the deterioration of the characteristics with time at the OFF time of a semiconductor device. CONSTITUTION:A detection electrode 3 for detecting the deterioration of the characteristics with time of a semiconductor device is provided between an output electrode 1 and a channel stopper electrode 4. A resistor 2 is connected between the electrodes 1 and 3. At the time of the deterioration of the characteristics, the electrode 3 short-circuits the electrode 4 and outputs a power potential having the same potential as that in the electrode 4. |
