发明名称 Removal of polymer residues on carbon@ basis, useful for cleaning plasma reactors - by excitation of plasma contg. ozone in reactor and evacuating obtd. volatile end prods.
摘要 Removal of residues (30) on C basis from surfaces (11,12,13,17) of a reactor (10) includes: a) excitation of a plasma contg. ozone in the reactor (10), so that the ozone reacts with the residues (30) on C basis on the surfaces (11,12,13,17) and forms volatile end prods.; and b) evacuation of the volatile end prods. from the reactor (10). Cleaning a reactor (10) pref. includes: (a) excitation of a first plasma contg. ozone - an action which results in flowing residues being produced in the reactor; (b) excitation of a second plasma, by means of an increase in the pressure on the first plasma - an action which results in more flowing residues being reduced; (c) removal of the flowing residues from the reactor. First plasma has a pressure from about 100-500 mtorr and an energy density from about 1-5 W/cm2. Second plasma has the same energy density at a pressure from about 500 mtorr to 10 torr. First plasma is intended for cleaning the energy electrode (17), while the second plasma is intended for cleaning the earthed elements (11,12,13). USE/ADVANTAGE - For maintenance of vacuum chamber used for prodn. of semiconductor components. Residues are removed at rates considerably higher than those obtd. conventionally.
申请公布号 DE4319683(A1) 申请公布日期 1993.12.16
申请号 DE19934319683 申请日期 1993.06.14
申请人 MICRON TECHNOLOGY, INC., BOISE, ID., US 发明人 DER ERFINDER WIRD NACHTRAEGLICH BENANNT
分类号 H01L21/205;B08B7/00;C23G5/00;H01L21/00;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):C23F4/00 主分类号 H01L21/205
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