| 摘要 |
PURPOSE:To enhance a contact hole in margin for letting a capacitor plate electrode penetrate when the contact hole is bored for a lead-out wire which leads out the capacitor plate electrode. CONSTITUTION:A contact hole 45 which is used for both a dummy word line 37 and a dummy memory node electrode 47 and the dummy electrode 47 are formed at a point where a contact hole 17 for a lead-out line 13 of a plate electrode 12 of a capacitor 11 which constitutes a memory cell is bored. Therefore, a recessed step is previously formed at a point where the contact hole 17 is bored, so that interlayer insulating films 24, 25, and 26 become apparently thick in a vertical direction. Therefore, the contact hole 17 is nearly equal to a contact hole 16 of a bit line 14 in depth, and consequently the contact hole 17 becomes large in margin for letting the plate electrode 12 penetrate by overetching the electrode 12. |
