| 摘要 |
PURPOSE:To provide a semiconductor device which is characterized by using a capacitor insulating film structure, wherein a leakage current is little, the temperature dependence of the leakage current is also little and which makes possible a reduction in a film thickness, and a method of manufacturing the device and moreover, to make it possible to reduce significantly the reaction of a high dielectric film with an electrode. CONSTITUTION:Silicon nitride films having a small electron mobility and Si oxide films having a small hole mobility are alternately laminated in the order ranging from the side of a lower electrode 4 to the nitride film 6, the oxide film 7, the nitride film 8 and the oxide film 9. The component of a current which is made to flow through the oxide films in this structure is subjected to rate control by a layer having a slow mobility whether the mobility may be an electron mobility or a hole mobility. As a result, a leakage current is reduced. Moreover, according to this oxidation method, as the control of an oxide film thickness of several Angstroms or thereabouts can be strictly performed, it is possible to correspond to a reduction in a film thickness. Moreover, by forming the silicon nitride films between a high dielectric film and an upper electrode 10, the reaction of the base silicon electrode 4 with the high dielectric film can be suppressed. |
