| 摘要 |
<p>PURPOSE:To lessen a non-volatile semiconductor memory in cell size and to provide a method of driving it. CONSTITUTION:A diode D is connected to the source of a conventional memory transistor A, whereby a voltage is applied between a gate electrode and a substrate to carry out a write operation, and on the other hand, a voltage is applied to the drain electrode of a cell where no data is written, and a channel region is charged up by the action of the diode D which serves as a reverse current blocking means to forbid the write of data in the cell concerned. At reading, a voltage is applied to the source of the memory transistor A to turn the diode D ON, and a state 1 or 2 where the transistor A is turned ON or OFF corresponding to the threshold voltage of a gate is read out.</p> |
