| 摘要 |
PURPOSE:To mount the title multiple integrated circuit chips at high density. CONSTITUTION:The title high density mounting method is composed of the two steps as follows, i.e., the first step of forming a subsidence part having the area smaller than the mounting area of the first integrated circuit chip IC 1 but larger than that of the second circuit chip IC 2, furthermore having the larger depth than the mounting height of the second integrated circuit chip IC 2 on the mounting surface of a mounting substrate as well as the second step of loading the first integrated circuit chip IC 1 on the surface of the mounting substrate 1 in the subsidence part after mounting the second integrated circuit chip IC 2 on the bottom part of the subsidence part. |
