| 摘要 |
PURPOSE:To provide a light emitting diode array wherein light emission intensity distribution can be unified, taking up efficiency of light is improved and the number of manufacturing processes is small. CONSTITUTION:An n-type GaAs layer 4 (a crystal growth layer for ohmic contact) is provided to a slant surface of each of a plurality of mesa-shaped light emitting regions 8 arranged parallel in a line and a separate electrode 6 is led out of the n-type GaAs layer 4. A p-n junction surface between a p-type GaAlAs layer 2 and an n-type GaAlAs layer 3 is in contact with an insulating film 5 alone and is not in contact with other crystal growth layer. Light generated in the p-n junction surface is surely taken out to the outside without leaking or without being shielded by the separate electrode 6. |
