| 摘要 |
PURPOSE:To provide a method of manufacturing a large semiconductor device in high yield and the defect correction without fail by a method wherein, after removing the defective part of the semiconductor integrated circuit device formed on a semiconductor substrate, a good element is buried in the removed part. CONSTITUTION:After the formation of a trench and through hole 2 having sidewall of (III) surface using anisotropical step in the element formation region 4 on a semiconductor substrate 1, a buried element 3 having sidewall of (III) surface is formed in the trench and through hole 2 by the same anisotropical etching step. Next, the buried element 3 is inserted into the trench and through hole 2 and after connecting the semiconductor substrate 1 to the buried element 3 by a wiring 6, the whole surface is coated with an insulating film 7. Next, a reinforcement plate 5 serving both as the enhancement of the reliability upon junction strength by the engagement of the semiconductor substrate 1 with the buried element 3 and the cooling down of the heat generated by the semiconductor substrate 1 and the buried element 3 is to be provided. Through these procedures, it may be made possible that the defective part only in the element region may be removed to be easily corrected. |
