| 摘要 |
<p>PURPOSE:To grind without contaminating by an alkali metal and any risks of damaging the insulating film surface by a method wherein, after an insulating film is formed on a semiconductor substrate at least a part of this insulating film is ground by an abrasive containing cerium oxide and removed. CONSTITUTION:After a SiO2 film 2 and a polysilicon film 3 are formed on a Si substrate in a semiconductor device, photoresist patterns are formed thereon. Also, these patterns are used as a mask and the polysilicon layer 3 is patterned by an RIE method using CF4 gas, thereafter the photoresist is ashed to separate and remove it to next form a SiO2 film 5. This SiO2 film 5 is ground to complete the objective semiconductor device. At this grinding process, the grinding is performed by using an abrasive containing a ceric oxide. Then, this abrasive is favorably matter in which particles containing a cerium oxide are suspended into water and their maximum particle size is 4mum or less.</p> |
