| 摘要 |
The semiconductor device is mfd. by (a) laminating a first oxide film, a first nitride film and a photoresist film on the semiconductor substrate in turn, and forming a pattern by the photolithography method, (b) plasma-etching the exposed substrate, (c) forming a second oxide film, (d) forming a second nitride film and a third oxide film, (e) etching the films by the anisotropic etching, and forming a sidewall spacer, (f) ion-implanting an impurity for channel-blocking into the surface of the substrate, (g) removing the third oxide film of the spacer, and (h) thermal growing an isolating oxide layer on the element-isolation region.
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