发明名称 |
THIN-FILM SEMICONDUCTOR DEVICE, ITS MANUFACTURE, AND LIQUID CRYSTAL DISPLAY USING THIN-FILM SEMICONDUCTOR DEVICE |
摘要 |
<p>PURPOSE:To prevent a deterioration in characteristics and a decrease in productive yield even for a substrate made of a high polymer material (a plastic film) in a semiconductor device. CONSTITUTION:A substrate 11 made of a high polymer material (a plastic film) has a projected and recessed part 14 on its surface 12, and a semiconductor device 13 (e.g. a thin-film transistor) is formed on this surface 12. Then, the surface 12 of the substrate 11 can be processed in a laser abrasion method, in which a thermal process factor becomes negligible. Consequently, only an irradiated part with a laser beam can be instantaneously etched at low temperatures without damaging the other surrounding part thereof, and the depth of etching is controlled with high accuracy.</p> |
申请公布号 |
JPH05326965(A) |
申请公布日期 |
1993.12.10 |
申请号 |
JP19920148411 |
申请日期 |
1992.05.15 |
申请人 |
RICOH CO LTD |
发明人 |
KONDO NOBUAKI;MORI KOJI;KUSUNOKI MASAMUNE |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L29/784 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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