| 摘要 |
PURPOSE:To enable a capacitor to be more enlarged in surface area than usual through a simple manufacturing method where the capacitor and its lower electrode of a semiconductor element such as a DRAM are formed. CONSTITUTION:Si is epitaxially grown through an ELO(Epitaxial Lateral Overgrowth) method into a trapezoidal Si layer 6 possessed of a slope filling a contact hole 10, the trapezoidal Si layer 6 serves as a lower electrode 6 of a capacitor, and a capacitor insulating film 7 is formed on the lower electrode 6. Moreover, an insulating film 5 formed on the contact hole 10 is removed, whereby the Si layer 6 is turned into a mushroom-type 6a which functions as a lower electrode wider in surface area. |
