| 摘要 |
PURPOSE:To provide a semiconductor light emitting element wherein light emission inside a region whose wavelength is shorter than green can be acquired, a strain is not generated between a substrate and a semiconductor layer thereon and light can be oscillated with high efficiency. CONSTITUTION:Layers 3, 4 which consist of a II-VI compound semiconductor are formed on a III-V compound semiconductor substrate 1 and a layer 5 consisting of a III-V compound semiconductor whose lattice constant is almost the same as that of the substrate 1 is laminated and formed thereon. The II-V compound semiconductor can oscillate light in a region whose wavelength is shorter than a green region in mixed crystal ratio which enables lattice matching to a substrate. Furthermore, since the III-V compound semiconductor layer 5 has a small contact resistance with an electrode 6 which is metal, a current is easy to be injected into an element. Therefore, light whose wavelength is shorter than green can be oscillated with high efficiency. |
