| 摘要 |
PURPOSE:To improve regrowth interface characteristics at the time of forming a current blocking layer by regrowing after a ridge waveguide is formed. CONSTITUTION:A ridge waveguide constituted of a clad layer 3 of AlGaAs is buried by epitaxially growing a current blocking layer 6 composed of GaInP after a regrowth interface protecting layer 5 is formed. Hence regrowth interface characteristics are improved, so that leak current and threshold current are reduced, and high reliability can be realized. |
