| 摘要 |
PURPOSE:To improve flatness in the plane on the substrate crystal surface by controlling the height of step on the grown crystal surface to the single atom layer and the width of terrace with the equal interval. CONSTITUTION:A vertical type semiconductor superlattice is formed through the processes that a GaAs buffer layer 5 is brown by the organic metal vapor growth method in the thickness of about 600Angstrom on a substrate crystal surface of a GaAs inclined substrate 1, thereafter a superlattice is grown in the 20 periods, each period thereof including formation of three-atom layers of AlAs crystal layer 10 and three-atom layers of GaAs crystal layer 11 on this GaAs buffer layer 5, next a semiconductor superlattice is grown for 900 periods, each period thereof including formation of 0.5 atom layer of AlAs and next 0.5-atom layer of GaAs on this superlattice. |
