发明名称 |
Dielektrische Passivierung. |
摘要 |
A semiconductor device comprising a substrate layer (11) of a first conductivity type, an epitaxial layer (13) of a second conductivity type overlying said substrate layer (11), and an insulating layer (16) covering at least a portion of said epitaxial layer (13). According to the invention, a passivating layer (17) having a high dieletric constant, at least ten times higher than that of silicon-dioxide, is present on said insulating layer (16). |
申请公布号 |
DE3688500(T2) |
申请公布日期 |
1993.12.09 |
申请号 |
DE19863688500T |
申请日期 |
1986.11.28 |
申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN, EINDHOVEN, NL |
发明人 |
STUPP, EDWARD HENRY, NL-5656 AA EINDHOVEN, NL;VERA, EDUARDO SOBRINO, NL-5656 AA EINDHOVEN, NL |
分类号 |
H01L21/314;G03B27/52;H01L23/485;H01L29/06;H01L29/40;H01L29/78 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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