发明名称 |
High current pulse thyristor with two opposite semiconductor main faces - has GTO structure with highly doped emitter distributed over first face in form of narrow cathode fingers |
摘要 |
The first semiconductor substrate (8) face (H1) is for a cathode (K), while the other one (H2) is for an anode (A). Within the substrate and between the two opposite faces is a succession of differently doped layers, contg. progressively from the first to the second face an n emitter (12), a p base (13), an n base (14), and a p emitter (15). In the first face, a thyristor (6) igniting gate structure is distributed. The GTO n-emitter is distributed over the first face in the form of narrow, elongate cathode fingers (11), surrounded by the gate metallising film. The doping concentration of the p base is less than 10 power 17 per cubic cm. USE/ADVANTAGE - E.g. for thyratron frequency thyristor, with improved switching characteristic without GTO drawbacks.
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申请公布号 |
DE4218398(A1) |
申请公布日期 |
1993.12.09 |
申请号 |
DE19924218398 |
申请日期 |
1992.06.04 |
申请人 |
ASEA BROWN BOVERI AG, BADEN, AARGAU, CH |
发明人 |
RAMEZANI, EZATOLLAH, DR., MOERIKEN, CH;STREIT, PETER, DR., WIDEN, CH |
分类号 |
H01L29/744;(IPC1-7):H01L29/743;H02M1/00;H03K17/72 |
主分类号 |
H01L29/744 |
代理机构 |
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地址 |
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