发明名称 |
II-VI LASER DIODES WITH QUANTUM WELLS GROWN BY ATOMIC LAYER EPITAXY AND MIGRATION ENHANCED EPITAXY |
摘要 |
A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200 DEG C in an MBE chamber. Sources of Cd, Zn, and Se are injected alternately into the chamber to grow a short-period strained-layer superlattice (SPSLS) quantum well layer including overlaying monolayers of Cd, Zn and Se. The quantum well layer is described by the notation [(CdSe)m(ZnSe)n]p where m, n and p are integers. |
申请公布号 |
WO9324979(A1) |
申请公布日期 |
1993.12.09 |
申请号 |
WO1993US04668 |
申请日期 |
1993.05.14 |
申请人 |
MINNESOTA MINING AND MANUFACTURING COMPANY |
发明人 |
CHENG, HWA;DEPUYDT, JAMES, M.;HAASE, MICHAEL, A.;QIU, JUN |
分类号 |
H01S5/00;H01L21/363;H01L33/00;H01S5/34;H01S5/347;(IPC1-7):H01S3/19;C30B23/02 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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