| 摘要 |
PURPOSE:To obtain a ceramic multilayer package for a semiconductor device, wherein a reduction in the resistance of a signal wiring, which is needed as the whole package, and a miniaturization of the form of the package are achieved and at the same time, suppression of the generation of a failure is made possible and which is capable of corresponding also to a high-speed device and the like. CONSTITUTION:A ceramic multilayer package 1 for a semiconductor device has an internal signal wiring layer 4 and a thin film surface signal wiring layer 7 with a connection pad 6 provided at one end part of it. The layer 4 and the other end part of the layer 7 are electrically connected to each other through a plurality of rows of via holes 8. Via hole rows 12a to 12d are provided on both sides of a connection pad row 11, for example. A signal wiring length through the layer 7 is set in 1/2 or shorter of a total signal wiring length, whereby a reduction in the resistance of a signal wiring is contrived. |
