| 摘要 |
<p>Materials for use as a dielectric to separate various metallic layers (10/11, 12/13) within a magnetoresistive transducer include oxides of Ta, Hf, Zr, Y, Ti, or Nb. Thin films of these materials constitute dielectric films which maintain their integrity as insulators at thickness of down to 5 nm. <IMAGE></p> |
