发明名称 |
Method of preparing compound semiconductor. |
摘要 |
<p>A vapor phase growth method of a III-V group compound semiconductor thin film uses hydride and organometallic compound containing no halogen elements as raw material for the growth. The method is carried out by repeatedly and alternately introducing (A) Group III metal organometallic compound raw material gas and (B) halide and/or halogen gas into the growth chamber, to grow the thin film. It is possible to obtain high-quality crystal growth with planarization of hetero junction interface, improvement of surface homology or a facet, and no deposit of polycrystals on the mask in a wide range.</p> |
申请公布号 |
EP0573269(A2) |
申请公布日期 |
1993.12.08 |
申请号 |
EP19930304261 |
申请日期 |
1993.06.02 |
申请人 |
MITSUBISHI KASEI CORPORATION |
发明人 |
GOTO, HIDEKI;FUJII, KATSUSHI;SHIMOYAMA, KENJI |
分类号 |
C30B25/02;H01L21/20;H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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