METHOD FOR MANUFACTURING MULTIPLE LDD TRANSISTOR USING DOUBLE INSULATING SPACER,申请号KR1019900018167-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING MULTIPLE LDD TRANSISTOR USING DOUBLE INSULATING SPACER
摘要
申请公布号	KR1019930011470(B1)	申请公布日期	1993.12.08
申请号	KR1019900018167	申请日期	1990.11.10
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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