发明名称 |
Semiconductor device and method of fabricating the same. |
摘要 |
<p>There is disclosed a semiconductor device wherein a p layer (7) is formed in an isolating portion (Z) and portions (1a, 1b) of an n-type base layer (1) lie on opposite sides of the p layer (7), the upper surfaces of the p layer (7) and the portions (1a, 1b) lying in the same plane as the upper surface of a p layer (3). The presence of the p layer (7) provides for high resistance to breakdown and high formation accuracy of the p layers (2, 3, 7) as compared with a structure in which the isolating portion (Z) lies in the bottom of a the recess, whereby the semiconductor device is less susceptible to short-circuit between the p-type base layer (2) and the p layer (3). <IMAGE></p> |
申请公布号 |
EP0573017(A1) |
申请公布日期 |
1993.12.08 |
申请号 |
EP19930108879 |
申请日期 |
1993.06.02 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAKAGAWA, TSUTOMU;TOKUNOH, FUTOSHI;NIINOBU, KOUJI |
分类号 |
H01L29/74;(IPC1-7):H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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