| 摘要 |
The method for forming a self-aligned contact is characterized by (a) laminating an insulating layer with a first nitride film (b), a second oxide film (2") and a second nitride film (6'), (b) forming a photoresist film pattern (4) on the film (6'), (c) removing the films (2",6') by the dry etching, (d) removing the pattern (4) and the films (2",6,6') by the wet etching to form a contact hole (20), (e) forming an electroconductive layer (8), and (f) contacting the layer (8) to the contact region through the contact hole (20).
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