发明名称 POSITIVE TYPE CHEMICAL AMPLIFICATION PHOTORESIST AND FORMATION OF RESIST PATTERN
摘要 PURPOSE:To improve the heat resistance of the positive type chemical amplification photoresist by incorporating a crosslinking agent therein. CONSTITUTION:The crosslinking agent is further added to the positive type chemical amplification photoresist of a binary system contg. a phenolic resin and a photoacid generating agent or a ternary system contg. further a dissolution suppressor in these components. The positive type chemical amplification photoresist 2 is brought into a crosslinking reaction by baking at the temp. higher than the temp. of post-exposing baking after pattern exposing, post- exposing baking, developing and full-surface exposing, by which the resin is polymerized to a higher polymer and the heat resistance of resist patterns 3 is thereby improved.
申请公布号 JPH05323610(A) 申请公布日期 1993.12.07
申请号 JP19920124967 申请日期 1992.05.18
申请人 FUJITSU LTD 发明人 TANAKA HIROYUKI;OIKAWA AKIRA
分类号 G03F7/004;G03F7/029;G03F7/039;G03F7/38;G03F7/40;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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