Method of forming shallow junctions in field effect transistors,申请号US19910790953-传众专利搜索

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发明名称	Method of forming shallow junctions in field effect transistors
摘要
申请公布号	US5268317(A)	申请公布日期	1993.12.07
申请号	US19910790953	申请日期	1991.11.12
申请人	SIEMENS AKTIENGESELLSCHAFT	发明人	SCHWALKE, UDO;ZELLER, CHRISTOPH;ZEININGER, HEINRICH J.;HAENSCH, WILFRIED
分类号	H01L29/78;H01L21/225;H01L21/265;H01L21/336;(IPC1-7):H01L21/265;H01L21/44	主分类号	H01L29/78
代理机构		代理人
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