| 摘要 |
A rectifier circuit is constructed entirely with field-effect transistors of the same conductivity type and which provides rectification with a small voltage drop and hence a high efficiency. A normally-off FET is coupled between an alternating voltage input and a direct voltage output. A bias circuit biases the gate of this FET so as to reduce the effective threshold voltage of the FET substantially to zero. Bridge rectifier circuits, based on this principle make it possible to obtain both half-wave and full-wave rectification with a very small voltage drop. Various circuits for generating the gate bias are disclosed.
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