Programmable memory device having programming current absorbing transistors,申请号US19910751107-传众专利搜索

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发明名称	Programmable memory device having programming current absorbing transistors
摘要
申请公布号	US5268864(A)	申请公布日期	1993.12.07
申请号	US19910751107	申请日期	1991.08.28
申请人	FUJITSU LIMITED	发明人	FUJITA, YOSHIYUKI;UENO, KOUJI;TSUCHIMOTO, YUJI
分类号	G11C17/14;G11C17/18;(IPC1-7):G11C11/30	主分类号	G11C17/14
代理机构		代理人
主权项
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