发明名称 |
Method of fabricating a semiconductor laser |
摘要 |
A method of fabricating a semiconductor laser includes successively forming on a semiconductor substrate by crystal growth an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus, a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic and a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic. A mask is formed for selectively etching the current blocking layer in the form of a stripe. A buffer-etching step is formed on both the current blocking layer and the mask to expose a surface of the current blocking layer and the thin-film layer, the surface including a Group V element arsenic. An outer cladding layer comprising a first-conductivity type compound semiconductor having a Group V element arsenic is formed on the current blocking layer and the thin-film layer in an atmosphere having a Group V element arsenic. The method has characteristic features including carrying out the crystal growth only twice, minimizing the movement of impurities in crystals, regrowing the interface with a very little defect and forming a structure wherein the outer cladding layer has a smaller width at its portion near to the active waveguide.
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申请公布号 |
US5268328(A) |
申请公布日期 |
1993.12.07 |
申请号 |
US19920991223 |
申请日期 |
1992.12.16 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MORI, YOSHIHIRO;MANNOH, MASAYA;KAMIYAMA, SATOSHI;OHNAKA, KIYOSHI |
分类号 |
H01S5/22;H01S5/223;H01S5/323;(IPC1-7):H01L21/20 |
主分类号 |
H01S5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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