Semiconductor memory device

摘要

The present invention provides a semiconductor memory device capable of reducing its current consumption, controlling the generation of noise, and increasing in access using a precharge voltage applied to a precharge circuit. In the semiconductor memory device, a precharge circuit is connected to a pair of data input/output lines, and includes a MOS transistor connected between one of the data input/output lines and a node of a precharge voltage and a MOS transistor connected between the other data input/output line and a node of the precharge voltage. The gates of the MOS transistors are supplied with control signals so that the MOS transistors are turned on when the data input/output lines are precharged. A MOS transistor is connected to the data input/output lines for equalizing them. The precharge voltage is set to half of a value obtained by subtracting the threshold voltage of the MOS transistor from the power supply voltage.