发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To eliminate an erroneous operation of a memory circuit owing to alpha rays even when using a ceramic package as a sealing body by protecting a semiconductor substrate provided with the memory circuit thereon using polyimide resin. CONSTITUTION:An n-type region 20 becoming part of a memory circuit is diffused on the surface of a p-type silicon substrate 1, and a SiO2 film 21' is coated on the entire surface thereof. An opening is then perforated at the film 21' on the region 20, a wire conductor layer 21'' is coated through the opening thereon, a polyimide- isoindolo-quinazolinedione resion film 23 is coated on the entire surface by a spin-on process and heat treated to semi-harden it. Thereafter, it is photoetched using a hydrazine solution, a bonding pad portion 22 is perforated at the film 23, heat treated, and completely hardened. A bonding wire 24 is then mounted at the portion 22, and this element is sealed in a ceramic package. Thus, alpha particles flown from package material are absorbed to the film 23 to prevent the erroreous operation of the circuit.</p>
申请公布号 JPS55128851(A) 申请公布日期 1980.10.06
申请号 JP19790035480 申请日期 1979.03.28
申请人 HITACHI LTD 发明人 SHIRASU TATSUMI;OSA YASUNOBU;KATOU TOKIO
分类号 H01L21/312;H01L23/29;H01L23/31;H01L27/06 主分类号 H01L21/312
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