Semiconductor device with linear silicone resin on intermediate insulation - giving level surface, ensuring constant dia. of etched through-holes

摘要

Semiconductor devices have (A) a semiconductor substrate (1) or (B) a semiconductor substrate (1) with p- and n-type surfaces, a p-type channel transistor on the p-type surface and an n-channel transistor on the n-type surface, the 2 transistors being connected with one another. In both cases, the substrate is coated in the given sequence with a first cpd. layer (9) with first and second cpd. zones (90a,90b), an intermediate insulating film (10), a film (14) of a linear silicone resin of formula (I) with through-holes (10a,10b) to the cpd. zones (90a,90b), and a second cpd. layer (12) connected with the cpd. zones (90a,90b) through these holes; and R1 = phenyl or lower alkyl; R2 = H or lower alkyl; n = 20-1000. USE/ADVANTAGE - Devices with a reliable multilayer cpd. structure can be produced, esp. with numerous through-holes of constant dia., since the (I) film makes the surface of the insulating layer planar. In an example, a CMOS inverter formed by 2 MOS transistors, formed on one surface of a p-type Si substrate by p- and n-type trough diffusion layers (2,3) with n- and p-source and drain zones (4b,5b,4a,5b) and gate electrode wires (6b,6a) over gate oxide films. These transistors are insulated from one another by a field oxide film (7). A first insulating film is formed and the drain of the n-channel transistor is connected to the source (4b) of the p-channel transistor by an Al cpd. layer (9) through a contact hole, then a second insulating film (10) is formed. This is covered with a (I) film and through-holes (10a,10b) are formed through this and the second insulating film down to the first Al cpd. layer. A second Al cpd. film is formed and covered with a passivating film. The through-holes (10a,10b) are of the same dia.