POLYCRISTALLINE SILICON THIN FILM AND PROCESS FOR FORMING IT AT LOW TEMPERATURE.

摘要

A polycrystalline silicon thin film, which can be formed at a temperature below 400 DEG C on a cheap glass base plate (3) such as a blue plate glass, or on a glass base plate (3) provided with metallic electrodes or transparent electrodes, and whose hydrogen content is less than 5 atom %. The polycrystalline silicon thin film can be formed at such a temperature by repeating several times the steps of forming an amorphous silicon film on the glass plate by, e.g., a CVD technique and then exposing the film to a hydrogen plasma for a predetermined time.