| 摘要 |
A semiconductor device comprising a semiconductor body (1) with a surface (4) provided with an insulating layer (6) in which contact windows (7) are provided through which silicon regions (3, 5) situated below the insulating layer (6) are connected to a pattern of conductors (11) formed in a package (8, 9, 10) of layers provided on the insulating layer (6) and in the contact windows (7), which package comprises a barrier layer (8) of TiW with 10 to 30 at.% Ti, an intermediate layer (9) improving the barrier properties, and a top layer (10) comprising aluminium. According to the invention, the intermediate layer (9) improving the barrier properties is a layer of TiW which comprises nitrogen. The combination according to the invention of the barrier layer (8) with the intermediate layer (9) improving the barrier properties exhibits better barrier properties than does a barrier layer of TiW which has been exposed to air. |
