| 摘要 |
<p>The invention described forms an improved dielectric material by doping an intrinsic perovskite material having an intrinsic critical grain size with one or more donor dopants, then forming a layer of the donor doped perovskite material having an average grain size less than the intrinsic critical grain size whereby the dielectric constant of the layer is substantially greater than the dielectric constant of the intrinsic perovskite material with an average grain size similar to the average grain size of the layer. The critical grain size, as used herein, means the largest grain size such that the dielectric constant starts to rapidly decrease with decreasing grain sizes. Preferably, the donor doped perovskite material is further doped with one or more acceptor dopants to form a donor-acceptor doped perovskite material whereby the resistivity is substantially increased and/or the loss tangent is decreased. Preferably, the intrinsic perovskite material has a chemical composition ABO3, where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements. Structures containing this improved dielectric material include a layer of donor doped perovskite material with average grain size less than the intrinsic critical grain size formed on the surface of a substrate. Other structures include such a layer of donor doped material interposed between two electrically conducting layers. Other methods and structures are also disclosed. <IMAGE></p> |
