发明名称 Semiconductor integrated circuit
摘要 Write transistors Q1W, Q2W, Q3W, Q4W are arranged in a line, and read transistors Q1R, Q2R, Q3R, Q4R are also arranged in a line. Wiring pads P11, P12, P13, P14 are arranged between the write and read transistors in a line parallel to both of the lines. Heat generated by a write operation in the write transistors does not significantly influence the read transistors in a read operation. The influences are exerted on the read transistors approximately uniformly, so that an offset voltage difference can be minimized in differential amplification.
申请公布号 US5266826(A) 申请公布日期 1993.11.30
申请号 US19920878511 申请日期 1992.05.05
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 UMEYAMA, TAKEHIKO
分类号 G11B5/09;H01L21/60;H01L21/82;H01L21/822;H01L23/36;H01L23/528;H01L27/02;H01L27/04;H03F3/72;(IPC1-7):H01L27/22;H01L27/10;H01L23/48 主分类号 G11B5/09
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