Plasma processing method utilizing a microwave and a magnetic field at high pressure

摘要

A plasma processing deposition method for forming a material on a substrate is disclosed. The method includes inputting a reactive gas into a reaction chamber, admitting a microwave into the reaction chamber at a predetermined frequency and in a predetermined direction, establishing a magnetic field in the reaction chamber where the direction of the magnetic field is substantially parallel to the direction of the propagation of the microwave and the strength of the magnetic field causes cyclotron resonance at approximately the position where the substrate is held in the reaction chamber, exhausting the reaction chamber to establish a predetermined pressure within the chamber and depositing the material on a surface of the substrate. This method may further include holding the substrate approximately at the predetermined cyclotron resonance position within the reaction chamber in order to readily deposit the material on the surface of the substrate.