发明名称 Gas distribution head for plasma deposition and etch systems
摘要 A gas distribution head for plasma deposition and etch systems includes an electrically conductive casing surrounding a plenum chamber. The casing includes a gas inlet and a gas outlet in the form of apertures through the casing. An electrically conductive electrode is positioned within the casing with respect to the interior surfaces of the casing such that a plasma forms between the electrode and the casing upon application of an electrical potential between them. A reactive gas is injected between the two electrodes which is struck to form a plasma for cleaning the inner surfaces of the plasma chamber of undesirable particulates and residues.
申请公布号 US5266153(A) 申请公布日期 1993.11.30
申请号 US19920899497 申请日期 1992.06.16
申请人 NATIONAL SEMICONDUCTOR CORP. 发明人 THOMAS, MICHAEL E.
分类号 C23C16/44;C23C16/455;H01J37/32;(IPC1-7):B44C1/22;B08B3/12;C23C16/00 主分类号 C23C16/44
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