发明名称 |
Gas distribution head for plasma deposition and etch systems |
摘要 |
A gas distribution head for plasma deposition and etch systems includes an electrically conductive casing surrounding a plenum chamber. The casing includes a gas inlet and a gas outlet in the form of apertures through the casing. An electrically conductive electrode is positioned within the casing with respect to the interior surfaces of the casing such that a plasma forms between the electrode and the casing upon application of an electrical potential between them. A reactive gas is injected between the two electrodes which is struck to form a plasma for cleaning the inner surfaces of the plasma chamber of undesirable particulates and residues.
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申请公布号 |
US5266153(A) |
申请公布日期 |
1993.11.30 |
申请号 |
US19920899497 |
申请日期 |
1992.06.16 |
申请人 |
NATIONAL SEMICONDUCTOR CORP. |
发明人 |
THOMAS, MICHAEL E. |
分类号 |
C23C16/44;C23C16/455;H01J37/32;(IPC1-7):B44C1/22;B08B3/12;C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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