| 摘要 |
PURPOSE:To enhance the integrity of bump electrodes by forming a plated primary film on a wiring layer, forming a chrome (Cr) plated layer for connecting predetermined bump forming position on a substrate to an electrode of the wiring layer on the primary film, and connecting the plated layer through the primary film to a plated layer to form a solder bump. CONSTITUTION:A contact hole is perforated at a protective film 3 on a wiring layer 2. A plated primary layer consisting of a Ti film 4 and a Cu film 5 is then formed on the entire surface of a substrate. There is then formed a Cu plated layer 6 so formed in pattern as to connect a predetermined bump forming position onto an electrode of the layer 2. Thereafter, a solder bump 7 connected to a Cr plated layer is formed at the bump forming position using a mask. At this time the bump is formed through a bump primary film 8 on a plated primary layer. Thereafter, with the layer 6 and the bump 7 as a mask the films 5, 6 are etched and removed. Thus, the bump may be provided on any position. Since the layer 6 is not moistened with solder, the bump may not be expanded owing to its moistened state. |
