| 摘要 |
PURPOSE:To provide a semiconductor laser which is easy to fabricate and which has a satisfactory response of a wavelength change with respect to a wavelength control current. CONSTITUTION:A semiconductor laser includes an active layer 2, an upper cladding layer 4, and a contact layer 5 all successively formed on a semiconductor substrate 1 and it effects lasing by injecting a current into a striped region of the active layer 2, it further includes a pair of electrodes 8a, 8b formed at a location in contact with a portion just above the stripped active region 2 of the upper cladding layer 4 for driving a current parallely to said layer and perpendicularly to the direction of the stripe. Accordingly, the structure is simplified, fabrication is facilitated, and heat transfer from a resistor film to the active layer is improved, and further a response of a wavelength change with respect to a control current is improved. |
