FORMATION OF RESIST PATTERN

摘要

PURPOSE:To form the resist patterns on the surface of a three-dimensional shape by simultaneous exposing in the method for formation of the resist patterns by a photolithographic technique. CONSTITUTION:This method for formation of the resist patterns of a positive type resist in the base parts adjacent to the level difference slopes on the front surface of an Si substrate having the level differences consists in preventing the loss of the resist patterns in the base parts of the level differences by reflected light on the level difference slopes 38 of the Si substrate 33 by utilizing a mask 32 having dummy patterns and disposing the resist patterns by averting the incident exposed parts by the reflected light on the level difference slopes 38 of the Si substrate.