| 摘要 |
PURPOSE:To ensure high output power while emitting light with a fine diameter in an AlGaInP semiconductor light emitting device by reducing device resistance. CONSTITUTION:There are laminated on an active layer 14 a p-AlGaInP cladding layer 15, a p-AlGaAs diffusion stopping layer 16, an n-AlGaAs current blocking layer 17, a p-AlGaAs conductor layer 18, and a p-GaAs contact layer 18, and a p-GaAs contact layer 19. Zn is diffused from the contact layer 19 to the diffusion stopping layer 16 to form a current passage region 21. A central region of the current passage region 21 reaches the diffusion stoppoing layer 16, and a surrounding region of the current passage region 21 is formed up to the conductor layer 18, and is shallower than the central region. |
