| 摘要 |
PURPOSE:To form passivation films on both of the surface and rear faces by a simple process. CONSTITUTION:An application substance to become a rear silicon oxide film 3 after heat treatment is applied and dried on one side face of a P-type silicon substrate, then an oxide application substance containing impurities is applied and dried on the other side photodetector face for being subjected to heat treatment in an oxidizing atmosphere in order to form an oxide film 2 combining an N-type diffusion layer 1 and a reflection preventive film to become a surface possivation layer on the side of the photodetector face while forming a rear silicon oxide film 3 for preventing the impurity diffusion at the time of forming the N-type diffusion layer 1 while becoming a rear passivation layer on the rear face simultaneously. |
