| 摘要 |
PURPOSE:To develop a large-diameter wafer with little irregularity and with high accuracy in a developing process for a photolithographic process when a semiconductor device is manufactured. CONSTITUTION:Before a wafer 1 to be treated is developed by using a developing solution, the surface of the wafer is brought into contact with air bubbles 7 in a surface-active agent, and the surface-active agent is made to adhere evenly to the whole surface of the wafer. The developing solution is brought uniformly into contact with the wafer; after that, the rear of the wafer 1 to be treated is sucked and held inside a developing and rinsing tank 11 whose area is larger than the diameter of the wafer; the whole surface is once brought into contact with the developing solution; the wafer is developed without causing a difference in the time during which the face of the wafer is brought into contact with the developing solution during a developing operation. |
