| 摘要 |
PURPOSE:To easily form a self-alignment type phase shift mask by forming light shielding film patterns and photosensitive resin patterns on a transparent substrate, then forming SiO2 films to constitute phase shifts only on the transparent substrate by utilizing the selectivity of a liquid phase growth method. CONSTITUTION:A positive type resist 3 is applied on light shielding bodies 2 of Cr formed and patterned on the transparent substrate 1. The resist is irradiated with UV light 4 from the opposite side of the transparent substrate 1, by which resist patterns 5 are formed. The light shielding bodies 2 of the Cr are side etched with the resist patterns 5 as a mask, by which the Cr patterns 6 are obtd. The substrate 1 is immersed into an aq. hydrosilicofluoric acid soln. in which the SiO2 is dissolved and satd. and an aq. boric acid soln. is added thereto, by which the SiO2 films 7 are selectively formed only on the transparent substrate 1. Film thicknesses k, l are so set that the phase difference between the recessed parts and projecting parts of the SiO2 films attain 180 deg. at this time, by which the self-alignment type phase shift mask is formed. |
