| 摘要 |
PURPOSE:To make it possible to emit light within the range from green to blue by laminating, on a silicon substrate, semiconductor chalcopyrite layers which contain Cu, Ga, S, and Se, and have almost the same lattice constant as the lattice constant of the silicon substrate, and at the same time, to prevent distortion between the substrate and the semiconductor layers. CONSTITUTION:On an n-type silicon substrate, an n-type Cu (GaxAl1-x) (SsSe1-y)2 layer 3 (0<x<1; 0<y<1), a p-type Cu (GauAl1-u) (SvSe1-v)2 layer 4 (0<u<1; 0<v<1), and a p-type silicon contact layer 5 are formed through consecutive lamination. In addition, an ohmic electrode 7 composed of Au and Zn is formed through vapor deposition on the side of the n-type silicon substrate 1, while an ohmic electrode 6 composed of Au, Ge, and Ni is formed through vapor deposition on the side of the p-type silicon contact layer. An element body 16 is structured by these layers and electrodes. As a result, the semiconductor layers which interface with the substrate through lattice can be obtained, and sufficient energy gap can be obtained between semiconductor having different crystal mixing ratio selected. |
