发明名称 PATTERNING METHOD OF FILM OF METAL ORGANIC PRECURSOR AND FILM PRODUCT
摘要 PURPOSE: To pattern a precursor film and improved film product by irradiating a beam, having intensity sufficient to denature specified portions of the precursor film onto other specified portions thereof on a patterned blocking layer and uncovered portions of this film. CONSTITUTION: This method of patterning a precursor film 10 comprises steps of depositing a blocking layer 18 on this film 10, patterning the blocking layer 18 to leave uncovered portions of the film 10, and irradiating a beam on the patterned blocking layer 18 and uncovered portions of the film 10. The beam energy is sufficiently high to radiatively denature the total thickness of the unmasked portions of the film 10 onto the portions covered with the blocking layer 18 of sufficient thickness to block the irradiated beam from radiatively denaturing the total thickness of the precursor layer.
申请公布号 JPH05315661(A) 申请公布日期 1993.11.26
申请号 JP19920187018 申请日期 1992.07.14
申请人 EASTMAN KODAK CO 发明人 RIANNSUN FUN;RONRU ZEN;YAN FUN
分类号 C01G1/00;C30B25/04;H01L21/02;H01L21/314;H01L39/24;(IPC1-7):H01L39/24 主分类号 C01G1/00
代理机构 代理人
主权项
地址