| 摘要 |
<p>PURPOSE:To provide a solid-state image sensing device where metal bumps, which connect elements formed on two different semiconductor substrates, are prevented from getting out of position. CONSTITUTION:Photodetective elements 3 and signal processing elements 4 which process signals outputted from the elements 3 are provided onto semiconductor substrates 1 and 5 different from each other in thermal expansion coefficient respectively for the formation of a solid-state image sensing device, where the elements 3 and 4 are connected together through metal bumps 6A and 6B, and organic compound layered films 11A, 11B, and 11C gradually changed in thermal expansion coefficient are arranged and filled between the substrates 1 and 5.</p> |
